BCW70 datasheet(2/6 Pages) FOSHAN

2 / 6 page

BCW70

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-50

Collector to Emitter Voltage

VCEO

-45

Emitter to Base Voltage

VEBO

-5.0

Collector Current(DC)

-100

Peak Collector Current

ICM

-200

Peak Base Current

IBM

-200

Collector Power Dissipation

250

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-100μA

IE=0

-50

Collector to Emitter Breakdown

Voltage

VCEO

IC=-500μA

IB=0

-45

Emitter to Base Breakdown Voltage

VEBO

IE=-100μA

IC=0

-5.0

Collector Cut-Off Current

ICBO

VCB=-20 V

IE=0

-0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-0.1

μA

hFE(1)

VCE=-5.0V

IC=-2.0mA

215

500

DC Current Gain

hFE(2)

VCE=-5.0V

IC=-10μA

150

VCE(sat)(1) IC=-10mA

IB=-0.5mA

-80

-300

Collector to Emitter Saturation

Voltage

VCE(sat)(2) IC=-50mA

IB=-2.5mA

-150

VBE(sat) (1) IC=-10mA

IB=-0.5mA

-720

Base to Emitter Saturation Voltage

VBE(sat) (2) IC=-50mA

IB=-2.5mA

-810

Base-Emitter On Voltage

VBE

VCE=-5.0V

IC=-2.0mA

-600

-750

Transition Frequency

IC=-10mA

VCE=-5.0V

f=100MHz

100

MHz

Collector Capacitance

VCB=-10V

IE=0

f=1MHz

4.5

Noise Figure

VCE=-5.0V

IC=-200μA

RS=2KΩ

f=1KHz

B=200Hz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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