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2SD1803 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # 2SD1803
Description  Silicon NPN transistor in a TO-252 Plastic Package.
PDF  6 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SD1803 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SD1803
Rev.E May.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
5
A
Collector Current – Continuous(Pulse)
ICP
8
A
Collector Power Dissipation
PC
1.0
W
Collector Power Dissipation
PC(Tc=25℃)
20
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=10μA
IE=0
60
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=1.0mA
RBE=∞
50
V
Emitter to Base Breakdown Voltage
VEBO
IE=10μA
IC=0
6
V
Collector Cut-Off Current
ICBO
VCB=40V
IE=0
1.0
μA
Emitter Cut-Off Current
IEBO
VEB=4.0V
IC=0
1.0
μA
DC Current Gain
hFE(1)
VCE=2.0V
IC=0.5A
70
400
hFE(2)
VCE=2.0V
IC=4.0A
35
Collector to Emitter Saturation
Voltage
VCE(sat) IC=3.0A
IB=0.15A
0.22
0.4
V
Base to Emitter Saturation Voltage
VBE(sat) IC=3.0A
IB=0.15A
0.95
1.3
V
Transition Frequency
fT
VCE=5.0V
IC=1.0A
180
MHz
Collector output capacitance
Cob
VCB=10V
f=1.0MHz
40
pF
Turn-On Time
ton
IC=10IB1=-10IB2=2.0A
50
ns
Storage Time
tstg
500
ns
Fall Time
tf
20
ns
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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