MJD112 datasheet(2/6 Pages) FOSHAN

2 / 6 page

MJD112

Rev.E May.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

100

Collector to Emitter Voltage

VCEO

100

Emitter to Base Voltage

VEBO

5.0

Collector Current - Continuous

2.0

Collector Current – Continuous(Pulse)

IC(Pulse)

4.0

Base Current - Continuous

Collector Power Dissipation

1.75

Collector Power Dissipation

PC(TC=25 )

℃

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

Pulse Test:PW≤300μs,Duty Cycle≤2%

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage*

VCEO*

IC=30mA

IB=0

100

Collector Cut-Off Current

ICEO

VCE=50V

IB=0

0.02

Collector Cut-Off Current

ICBO

VCB=100V

IE=0

0.02

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

2.0

DC Current Gain

hFE(1)*

VCE=3.0V

IC=2.0A

1000

12K

hFE(2)*

VCE=3.0V

IC=0.5A

500

hFE(3)*

VCE=3.0V

IC=4.0A

200

Collector-Emitter Saturation

Voltage

VCE(sat)1*

IC=2.0A

IB=8.0mA

2.0

VCE(sat)2*

IC=4.0A

IB=40mA

3.0

Base-Emitter Saturation Voltage*

VBE(sat)*

IC=4.0A

IB=40mA

4.0

Base-Emitter-On Voltage*

VBE(on)*

VCE=3.0V

IC=2.0A

2.8

Current Gain Bandwidth Product

VCE=10V

IC=0.75A

MHz

Output Capacitance

Cob

VCB=10V

IE=0

f=0.1MHz

100

*Pulse Test:Pulse Width≤380us,Duty Cycle≤2%.

*脉冲测试：脉宽≤380us,占空比≤2%。

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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