2SB940 datasheet(2/6 Pages) FOSHAN

2 / 6 page

2SB940

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-200

Collector to Emitter Voltage

VCEO

-150

Emitter to Base Voltage

VEBO

-6.0

Collector Current - Continuous

-2.0

Collector Current – Continuous(Pulse)

ICP

-3.0

Collector Power Dissipation

2.0

Collector Power Dissipation

PC(Tc=25 )

℃

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-500μA

IE=0

-200

Collector to Emitter Breakdown

Voltage

VCEO

IC=-5.0mA

IB=0

-150

Emitter to Base Breakdown Voltage

VEBO

IE=-500μA

IC=0

-6.0

Collector Cut-Off Current

ICBO

VCB=-200V

IE=0

-50

μA

Emitter Cut-Off Current

IEBO

VEB=-4.0V

IC=0

-50

μA

DC Current Gain

hFE(1)

VCE=-10V

IC=-150mA

240

hFE(2)

VCE=-10V

IC=-400mA

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-500mA

IB=-50mA

-1.0

Base to Emitter Voltage

VBE

VCE=-10mA IC=-400mA

-1.0

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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