3DA8050 datasheet(2/6 Pages) FOSHAN

2 / 6 page

3DA8050

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current - Continuous

1.5

Base Current

0.5

Collector Power Dissipation

1.0

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=0.1mA

IE=0

Collector to Emitter Breakdown

Voltage

VCEO

IC=2.0mA

IB=0

Emitter to Base Breakdown Voltage

VEBO

IE=0.1mA

IC=0

6.0

Collector Cut-Off Current

ICBO

VCB=35V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=6.0V

IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=1.0V

IC=100mA

300

hFE(2)

VCE=1.0V

IC=800mA

hFE(3)

VCE=1.0V

IC=5.0mA

Collector to Emitter Saturation

Voltage

VCE(sat) IC=800mA

IB=80mA

0.28

0.5

Base to Emitter Saturation Voltage

VBE(sat) IC=800mA

IB=80mA

0.98

1.2

Base to Emitter Voltage

VBE

VCE=1.0V

IC=10mA

0.66

1.0

Transition Frequency

IC=50mA

VCE=10V

100

190

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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