CYStech Electronics Corp.

Spec. No. : C179SP

Issued Date : 2017.08.23

Revised Date :

Page No. : 2/6

DISP0165CTSP

CYStek Product Specification

The following specifications apply to each die

Parameters

Conditions

Symbol

Value

Units

Repetitive peak reverse voltage

650

V

RMS voltage

455

V

Continuous reverse voltage

650

V

Forward rectified current (per die)

Single phase half wave,

1

A

Repetitive Peak Forward Current

(per die)

Single phase half wave,

1.57

A

Forward surge current

(per die)

8.3ms single half sine-wave

superimposed on rated load

(JEDEC method)

9

A

Maximum reverse recovery time

(per die)

trr

1000

ns

Storage temperature range

Tstg

-55~+150

°C

Operating junction temperature range

Tj

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

10

39

75

169

°C/W

12.5

(Note 1 )

3.2

(Note 2 )

1.7

(Note 3 )

0.74

W

Note: 1. Device mounted on FR-4 PCB, single sided 2 oz. copper, pad dimension 50mm×50mm.

2. Device mounted on FR-4 PCB, single sided 1 oz. copper, pad dimension 25mm×25mm.

3. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad dimension.

°C, unless otherwise noted)

Characteristic

Symbol

Condition

Min.

Typ

Max.

Unit

650

-

-

V

-

-

0.95

Forward Voltage

-

-

1.2

V

-

-

100

nA

Reverse Leakage Current

°C

-

-

10

μA

Junction Capacitance

-

11.6

-

pF