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IRF6644 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6644 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 11/23/04 IRF6644 DirectFET Power MOSFET DirectFET ISOMETRIC MN PD - 96908C Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance Vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical On-Resistance Vs. Drain Current Description The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. S Q SX ST MQ M X MT MN l Lead and Bromide Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l Compatible with existing Surface Mount Techniques 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) 0.00 0.04 0.08 0.12 TJ = 25°C TJ = 125°C ID = 6.2A VDSS VGS RDS(on) 100V max ±20V max 10.7m Ω@ 10V Qg tot Qgd Vgs(th) 35nC 11.5nC 3.7V 0 4 8 12 16 20 ID, Drain Current (A) 10 11 12 13 14 TA= 25°C VGS = 8.0V VGS = 7.0V VGS = 10V VGS = 15V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 220 Max. 8.3 60 82 ±20 100 10.3 6.2 Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A. Notes: |
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