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IRHM7450 Datasheet(PDF) 1 Page - International Rectifier |
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IRHM7450 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 12 page  Product Summary Part Number BVDSS RDS(on) ID IRHM7450 500V 0.45 Ω 11A IRHM8450 500V 0.45 Ω 11A Features: n Radiation Hardened up to 1 x 106 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Ceramic Eyelets Absolute Maximum Ratings Parameter IRHM7450, IRHM8450 Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 11 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.0 IDM Pulsed Drain Current 44 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 500 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt 3.5 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 9.3 (typical) g PD - 90673A Pre-Irradiation 500Volt, 0.45 Ω Ω Ω Ω Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, In- ternational Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviv- ing transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. They are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. oC A REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270 HEXFET® TRANSISTOR JANSH2N7270 www.irf.com 1 02/01/99 N CHANNEL MEGA RAD HARD IRHM7450 IRHM8450 |
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