6N100F datasheet(1/4 Pages) IXYS

Part #	6N100F

Description	Power MOSFETs

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C6

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

24

A

I

AR

T

C

= 25

°C6

A

E

AR

T

C

= 25

°C20

mJ

E

AS

T

C

= 25

°C

500

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

15

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

180

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

TO-247

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 500uA

1000

V

GS(th)

V

DS = VGS, ID = 2.5 mA

3.0

5.5 V

I

GSS

V

GS = ±20 V, VDS = 0

±100 nA

I

DSS

V

DS

= V

DSS

50

µA

V

GS = 0 V

T

J

= 125

°C1 mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

1.9

Ω

Note 1

98732B (9/02)

Power MOSFETs

F-Class: MegaHertz Switching

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, Low Intrinsic Rg

High dV/dt, Low t

rr

Features

●

RF capable MOSFETs

●

Double metal process for low gate

resistance

● Ruggedpolysilicongatecellstructure

● Unclamped Inductive Switching (UIS)

rated

●

Low package inductance

- easy to drive and to protect

● Fast intrinsic rectifier

Applications

● DC-DC converters

● Switched-mode and resonant-mode

power supplies, >500kHz switching

● DC choppers

● 13.5 MHz industrial applications

● Pulse generation

● Laser drivers

● RF amplifiers

Advantages

● Space savings

● High power density

TO-247 AD (IXFH)

(TAB)

G = Gate,

D = Drain,

S = Source,

TAB = Drain

TO-268 (IXFT) Case Style

(TAB)

G

S

IXFH 6N100F

IXFT 6N100F

V

DSS

= 1000 V

I

D25

=

6 A

R

DS(on)

= 1.9

Ω

t

rr ≤

≤≤≤≤ 250 ns

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