3CD910 datasheet(2/6 Pages) FOSHAN

2 / 6 page

3CD910

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-30

Collector to Emitter Voltage

VCEO

-30

Emitter to Base Voltage

VEBO

-5.0

Collector Current – Continuous

-3.0

Collector Power Dissipation

1.25

Collector Power Dissipation

PC(TC=25 )

℃

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-30V

IE=0

-10

μA

Emitter Cut-off Current

IEBO

VEB=-5.0V

IC=0

-10

μA

DC Current Gain*

hFE

VCE=-3.0V

IC=-0.5A

100

400

Collector to Emitter Saturation

Voltage*

VCE(sat)

IC=-1.5A

IB=-0.15A

-1.0

Base to Emitter Saturation

Voltage*

VBE(sat)

IC=-1.5A

IB=-0.15A

-2.0

Gain-Bandwidth Product

VCE=-5.0V

IC=-0.5A

f=1.0MHz

5.0

MHz

*脉冲测试：脉宽≤300μS，占空比≤2.0%。

*pulse test: pulse width≤300μS,duty cycle≤2.0%.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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