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2SC3150 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # 2SC3150
Description  Silicon NPN transistor in a TO-220 Plastic Package
PDF  6 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC3150 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC3150
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
1000
V
Collector to Emitter Voltage
VCEO
800
V
Emitter to Base Voltage
VEBO
7.0
V
Collector Current - Continuous
IC
3.0
A
Peak Collector Current - Continuous
ICP
10
A
Base Current - Continuous
IB
1.5
A
Collector Power Dissipation
PC
2.0
W
Collector Power Dissipation
PC(Tc=25 )
℃
50
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=1.0mA
IE=0
1000
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=5.0mA
IB=0
800
V
Emitter to Base Breakdown Voltage
VEBO
IE=1.0mA
IC=0
7.0
V
Emitter Base Cut-Off Current
ICBO
VCB=800V
IE=0
10
μA
Collector cut-off current
IEBO
VEB=5.0V
IC=0
10
μA
DC Current Gain
hFE(1)
VCE=5.0V
IC=0.2A
10
40
hFE(2)
VCE=5.0V
IC=1A
8
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=1.5A
IB=0.3A
2.0
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=1.5A
IB=0.3A
1.5
V
Transition Frequency
fT
VCE=10V
IC=0.2A
15
MHz
Output Capacitance
Cob
VCB=10V
f=1.0MHz
60
pF
Rain time
tr
VCE=5V
IC=500mA
（
UI9600）
4.0
μS
Storage time
ts
8.0
μS
Fall time
tf
4.0
μS
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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