TIP147T datasheet(2/6 Pages) FOSHAN

2 / 6 page

TIP147T

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-100

Collector to Emitter Voltage

VCEO

-100

Emitter to Base Voltage

VEBO

-5.0

Collector Current - Continuous

-10

Peak Collector Current

ICP

-15

Base Current - Continuous

-0.5

Collector Power Dissipation

PC(TC=25 )

℃

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-30mA

IB=0

-100

Collector Cut-Off Current

ICEO

VCE=-50V

IB=0

-2.0

Collector Cut-Off Current

ICBO

VCB=-100V

IE=0

-1.0

Emitter Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-2.0

DC Current Gain

hFE(1)

VCE=-4.0V

IC=-5.0A

1000

hFE(2)

VCE=-4.0V

IC=-10A

500

Collector to Emitter Saturation

Voltage

VCE(sat)(1) IC=-5.0A

IB=-10mA

-2.0

VCE(sat)(2) IC=-10A

IB=-40mA

-3.0

Base to Emitter Saturation Voltage VBE(sat)

IC=-10A

IB=-40mA

-3.5

Base to Emitter Voltage

VBE

VCE=-4.0V

IC=-10A

-3.0

Delay Time

VCC=-3V

IC=-5A

IB1=-20mA

IB2=20mA

RL=6Ω

0.15

μs

Rise Time

0.55

μs

Storage Time

tSTG

2.5

μs

Fall Time

2.5

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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