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STC4301D Datasheet(PDF) 2 Page - Stanson Technology |
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STC4301D Datasheet(HTML) 2 Page - Stanson Technology |
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2 / 8 page ![]() STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical N P Unit Drain-Source Voltage VDSS 40 -40 V Gate-Source Voltage VGSS ± 20 ± 20 V Continuous Drain Current TA=25℃ TA=70℃ ID 23.0 18.0 -20.0 -16.0 A Pulsed Drain Current IDM 40 -46 A Continuous Source Current (Diode Conduction) IS 18 -27.5 A Power Dissipation TA=25℃ PD 25 31.5 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 62.5 62.5 ℃ /W |
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