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STC6301D Datasheet(PDF) 3 Page - Stanson Technology

Part # STC6301D
Description  N&P Pair Enhancement Mode MOSFET
PDF  8 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STC6301D Datasheet(HTML) 3 Page - Stanson Technology

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STC6301D
N&P Pair Enhancement Mode MOSFET
23.0A / -18.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6301D 2017. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
N
P
60
-60
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA
VDS=VGS,ID=-250uA
N
P
1.0
-1.0
2.5
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=0V,VGS=±20V
N
P
±
100
±
100
nA
Zero Gate Voltage Drain
Current
IDSS
TJ=25℃
TJ=55℃
VDS=48V,VGS=0V
VDS=-48V,VGS=0V
N
P
1
-1
uA
VDS=32V,VGS=0V
VDS=-32V,VGS=0V
N
P
5
-5
Drain-source On-Resistance RDS(on)
VGS=10V, ID=8.0A
VGS=-10V,ID=-5.0A
N
P
0.037
0.046
0.045
0.060
Ω
VGS=4.5V, ID=5.0A
VGS=-4.5V,ID=-3.0 A
N
P
0.028
0.065
0.037
0.090
Forward Tran Conductance
gfs
VDS=5V,ID=8.0A
VDS=-5V,ID=-5.0A
N
P
21
15
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
IS=-1.0A,VGS=0V
N
P
1.2
-1.2
V
Dynamic
Total Gate Charge
Qg
N-Channel
VDS=48V,VGS=4.5V
ID≡8.0A
P-Channel
VDS=-48V,VGS=-4.5V
ID≡-5.0A
N
P
12.6
9.9
nC
Gate-Source Charge
Qgs
N
P
3.5
3.1
Gate-Drain Charge
Qgd
N
P
6.3
3.0
Turn-On Time
td(on)
tr
N-Channel
VDS=30V,RG=3.3Ω
ID=8A,VGS=10V
P-Channel
VDS=-20V,RG=3.3Ω
ID=-1A,RGS=-10V
N
P
8
9.7
nS
N
P
14.2
18
Turn-Off Time
td(off)
tf
N
P
24.6
45.8
N
P
4.6
45.8



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