STP4441

P Channel Enhancement Mode MOSFET

-10A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

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STP4441 2010. V1

SCRIPTION

STP4441 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application, noteook power management ane ther

battery powered circuits where high-side witching.

PIN CONFIGURATION

SOP-8

PART MARKING

SOP-8

Y：Year Code

A：Date Code

B：Wafer Code

FEATURE

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Super high density cell design for

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Exceptional on-resistance and maximum

DC current capability

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SOP-8 package design