IRFY220

V

I

R

Ω

Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

Parameter

Min.

Typ.

Max.

Units

V

DSS

Drain – Source Breakdown Voltage

200

V

I

D

Continuous Drain Current

4

A

P

D

Power Dissipation

14

W

R

DS(ON)

Static Drain – Source On–State Resistance

0.92

Ω

C

ISS

Input Capacitance

260

pF

Q

g

Total Gate Charge

14.3

nC

t

td(on)

Turn–On Delay Time

40

ns

t

tr

Rise Time

50

ns

t

td(off)

Turn–Off Delay Time

50

ns

t

f

Fall Time

50

ns

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Generated

13-Sep-02

TO257AB (TO220M)

PINOUTS

1 – Gate

2 – Drain

Case – Source

N-Channel MOSFET in

a Hermetically sealed

TO257AB Metal Package.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Dimensions in mm (inches).

2.54 (0.1)

BSC

3.70 Dia. Nom

1 2 3

0.8

(0.03)

2.70

(0.106)

1.0

(0.039)

4.6 (0.18)

10.6 (0.42)