SI7922DN datasheet(2/3 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si7922DN

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.6

On-State Drain Current

ID(on)

VDS ≥ 5 V, VGS = 10 V

VGS = 10 V, ID = 2.5 A

0.16

Drain-Source On-State Resistance

rDS(on)

VGS = 6 V, ID = 2.3 A

0.18

0.19

Ω

Forward Transconductance

gfs

VDS = 10 V, ID = 2.5 A

4.8

5.3

Diode Forward Voltage

VSD

IS = 2.2 A, VGS = 0 V

0.73

0.8

Dynamic

Total Gate Charge

4.8

5.2

Gate-Source Charge

Qgs

1.1

Gate-Drain Charge

Qgd

VDS = 50 V, VGS = 10 V, ID = 2.5 A

1.9

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDD = 50 V, RL = 50 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

Source-Drain Reverse Recovery Time

trr

IF = 2.2 A, di/dt = 100 A/µs

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 70322

S-60245

Rev. B, 20-Feb-06

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