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TF202 Datasheet(PDF) 1 Page - Unisonic Technologies

Part # TF202
Description  N-CHANNEL JFET
PDF  2 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TF202 Datasheet(HTML) 1 Page - Unisonic Technologies

  TF202 Datasheet HTML 1Page - Unisonic Technologies TF202 Datasheet HTML 2Page - Unisonic Technologies  
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UTCTF202
N-CHANNEL JFET
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R210-001,A
CAPACITOR MICROPHONE
APPLICATIONS
FEATURES
*Ultrasmall-sized package permitting TF202 appliedses to
be made small and slim.
*Especially suited for use in audio,telephone capacitor
microphones.
*Excellent voltage charactristic.
*Excellent transient characteristic.
*Adoption of FBET process.
SOT-113
1
3
2
1:SOURCE
2:DRAIN
3. GATE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Gate Drain Voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain Current
ID
1
mA
Power Dissipation
PD
100
mW
Junctin Temperature
Tj
150
°C
Storage Temperature
TSTG
-55~+150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gate Drain Breakdown Voltage
B(BR)GDO
IG=-100
µA
-20
V
Gate Source Cut off Voltage
VGS(off)
VDS=5V,ID=1
µA
-0.2
-0.6
-1.2
V
Drain Current
IDSS
VDS=5V,VGS=0
140
500
µA
Forward Transfer Admittance
lYFSl
VDS=5V,VGS=0,f=1KHz
0.5
1.2
mS
Input Capacitance
CISS
VDS=5V,VGS=0,f=1MHz
3.5
pF
Output Capacitance
CRSS
VDS=5V,VGS=0,f=1MHz
0.65
pF
CLASSIFICATION OF IDSS
RANK
E4
E5
E6
IDSS (
µA)
140-240
210-350
320-500


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