VOL618A

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 13-Oct-15

2

Document Number: 82405

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Power dissipation

100

mW

Forward current

60

mA

Forward surge current

1.5

A

Junction temperature

125

°C

OUTPUT

Collector emitter voltage

80

V

Emitter collector voltage

7V

Collector current

50

mA

100

mA

Power dissipation

150

mW

Junction temperature

125

°C

COUPLER

Total power dissipation

250

mW

Storage temperature range

-55 to +125

°C

Ambient temperature range

-55 to +110

°C

≤ 10 s

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

-

1.16

1.5

V

Capacitance

-45

-

pF

Reverse current

-

-

100

μA

OUTPUT

Collector emitter leakage current

-

10

200

nA

Collector emitter capacitance

-7

-

pF

COUPLER

Collector emitter saturation

voltage

VOL618A-2

-

0.25

0.4

V

VOL618A-3

-

0.25

0.4

V

VOL618A-4

-

0.25

0.4

V

Coupling capacitance

f = 1 MHz

-0.25

pF

0

50

100

150

200

250

300

0

20

40

60

80

100

120

T

Coupled device

Phototransistor

IR-diode