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ABSOLUTE MAXIMUM RATINGS

PACKAGE DISSIPATION RATINGS

RECOMMENDED OPERATING CONDITIONS

THS4504

THS4505

SLOS363C – AUGUST 2002 – REVISED MARCH 2004

These devices have limited built-in ESD protection. The leads should be shorted together or the device

placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

UNIT

16.5 V

±V

S

150 mA

4 V

Continuous power dissipation

See Dissipation Rating Table

150

°C

125

°C

-65

°C to 150°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

300

°C

(1)

The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may

cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are

stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

(2)

The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

PACKAGE

Θ

Θ

(1)

D (8 pin)

38.3

97.5

1.02 W

410 mW

DGN (8 pin)

4.7

58.4

1.71 W

685 mW

DGK (8 pin)

54.2

260

385 mW

154 mW

(1)

This data was taken using the JEDEC standard High-K test PCB.

(2)

Power rating is determined with a junction temperature of 125

°C. This is the point where distortion starts to substantially increase.

Thermal management of the final PCB should strive to keep the junction temperature at or below 125

°C for best performance and long

term reliability.

MIN NOM

MAX

UNIT

Dual supply

±5 ±7.5

Supply voltage

V

Single supply

4.5

5

15

-40

85

°C

2