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TL081 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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TL081 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage g 18V Power Dissipation (Notes 1 and 6) 670 mW Operating Temperature Range 0 Cto a70 C Tj(MAX) 115 C Differential Input Voltage g 30V Input Voltage Range (Note 2) g 15V Output Short Circuit Duration Continuous Storage Temperature Range b 65 Cto a150 C Lead Temp (Soldering 10 seconds) 260 C ijA 120 CW ESD rating to be determined DC Electrical Characteristics (Note 3) Symbol Parameter Conditions TL081C Units Min Typ Max VOS Input Offset Voltage RS e 10 kX TA e 25 C 5 15 mV Over Temperature 20 mV D VOS DT Average TC of Input Offset RS e 10 kX 10 m V C Voltage IOS Input Offset Current Tj e 25 C (Notes 3 4) 25 100 pA Tj s 70 C4 nA IB Input Bias Current Tj e 25 C (Notes 3 4) 50 200 pA Tj s 70 C8 nA RIN Input Resistance Tj e 25 C1012 X AVOL Large Signal Voltage Gain VS e g15V TA e 25 C 25 100 VmV VO e g10V RL e 2kX Over Temperature 15 VmV VO Output Voltage Swing VS e g15V RL e 10 kX g 12 g 135 V VCM Input Common-Mode Voltage VS e g15V g 11 a 15 V Range b 12 V CMRR Common-Mode Rejection Ratio RS s 10 kX 70 100 dB PSRR Supply Voltage Rejection Ratio (Note 5) 70 100 dB IS Supply Current 18 28 mA AC Electrical Characteristics (Note 3) Symbol Parameter Conditions TL081C Units Min Typ Max SR Slew Rate VS e g15V TA e 25 C13 V ms GBW Gain Bandwidth Product VS e g15V TA e 25 C 4 MHz en Equivalent Input Noise Voltage TA e 25 C RS e 100X 25 nV 0Hz f e 1000 Hz in Equivalent Input Noise Current Tj e 25 C f e 1000 Hz 001 pA 0Hz Note 1 For operating at elevated temperature the device must be derated based on a thermal resistance of 120 CW junction to ambient for N package Note 2 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage Note 3 These specifications apply for VS e g15V and 0 C sTA s a70 C VOS IB and IOS are measured at VCM e 0 Note 4 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature Tj Due to the limited production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation PD Tj e TA a ijA PD where ijA is the thermal resistance from junction to ambient Use of a heat sink is recommended if input bias current is to be kept to a minimum Note 5 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from VS e g5V to g15V Note 6 Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate outside guaranteed limits 2 |
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