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ASW135 Datasheet(PDF) 1 Page - Advanced Semiconductor Business Inc. |
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ASW135 Datasheet(HTML) 1 Page - Advanced Semiconductor Business Inc. |
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1 / 6 page ![]() 1/6 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 April 2017 ASW135 5 ~ 4000 MHz MMIC Amplifier (Supply Voltage = +3.3 V, TA = +25 C, Zo = 50 ) Parameters Units Typical Frequency MHz 150 900 2000 2400 2700 Gain dB 19.6 18.5 16.5 15.7 15.0 S11 dB -10 -14 -14 -15 -16 S22 dB -15 -15 -15 -14 -13 Output IP31) dBm 27.5 28.5 29.0 31.0 32.5 Noise Figure dB 1.9 1.8 1.8 1.8 1.9 Output P1dB dBm 17.5 17.5 18.5 17.0 17.0 Current mA 60 60 60 60 60 Device Voltage (V) V +3.3 +3.3 +3.3 +3.3 +3.3 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 2000 Gain dB 16.5 S11 dB -14 S22 dB -15 Output IP3 dBm 29 Noise Figure dB 1.8 Output P1dB dBm 18.5 Current mA 60 Device Voltage (V) V +3.3 Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage (V) +4.3 V Operating Junction Temperature +150 C Input RF Power (CW, 50 matched)* +20 dBm Thermal Resistance 125 C/W * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf Package Style: SOT-363 Features Description Typical Performance Absolute Maximum Ratings 16.5 dB Gain at 2000 MHz 18.5 dBm P1dB at 2000 MHz 29 dBm Output IP3 at 2000 MHz 1.8 dB NF at 2000 MHz MTTF > 100 Years Single Supply The ASW135, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication sys- tems up to 4 GHz. The amplifier is available in a SOT363 package and passes through the stringent DC, RF, and reliability tests. Application Circuit 500 ~ 3500 MHz IF (50 ~ 450 MHz) Product Specifications Package Style: SOT363 Pin Configuration Pin No. Function 1 RF OUT & Bias 4 RF IN 2,3,5,6 GND |
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