TSL257 datasheet(2/6 Pages) ETC

2 / 6 page

TSL257

HIGHSENSITIVITY

LIGHT TOVOLTAGE CONVERTER

TAOS023A – JULY 2000

www.taosinc.com

E 2001, TAOS Inc.

Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†

Supply voltage, VDD (see Note 1)

6 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, IO

±10 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) 25

°C

5 s

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, TA

–25

°C to 85°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg

–25

°C to 85°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

240

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltages are with respect to GND.

Recommended Operating Conditions

MIN

MAX

UNIT

Supply voltage, VDD

2.7

5.5

Operating free-air temperature, TA

°C

Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted)

(see Notes 2 and 3)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Dark voltage

Ee = 0

Maximum output voltage swing

VDD = 4.5 V,

No Load

4.49

VOM

Maximum output voltage swing

VDD = 4.5 V,

RL = 10 kΩ

4.2

Output voltage

Ee = 1.54 µW/cm2, λp = 470 nm, Note 5

1.6

2.4

αVD

Temperature coefficient of dark voltage (VD)

TA = 0°C to 70°C

–15

µV/°C

λp = 428 nm, see Notes 4 and 8

1.18

Irradiance responsivity

λp = 470 nm, see Notes 5 and 8

1.30

V/( W/cm2)

Irradiance responsivity

λp = 565 nm, see Notes 6 and 8

1.58

V/(

µW/cm2)

λp = 645 nm, see Notes 7 and 8

1.68

PSRR

Power supply rejection ratio

fac = 100 Hz, see Note 9

fac = 1 kHz, see Note 9

IDD

Supply current

Ee = 1.54 µW/cm2, λp = 470 nm, Note 5

1.9

3.5

NOTES:

2. Measured with RL = 10 kΩ between output and ground.

3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.

4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength

λp = 428 nm,

spectral halfwidth

∆λ½ = 65 nm.

5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength

λp = 470 nm,

spectral halfwidth

∆λ½ = 35 nm.

6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength

λp = 565 nm,

spectral halfwidth

∆λ½ = 28 nm.

7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength

λp = 645 nm,

spectral halfwidth

∆λ½ = 25 nm.

8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus

Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.

9. Power supply rejection ratio PSRR is defined as 20 log (

∆VDD(f)/∆VO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.

TSL257 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

TSL257 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL