Document Number 3696

Issue 1

2N5010

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

SILICON EPITAXIAL

NPN TRANSISTOR

FEATURES

General purpose power transistor for

switching and linear applications in a

hermetic TO–39 package.

Collector – Base Voltage

Collector – Emitter Voltage

R = 10

Ω

Emitter – Base Reverse Voltage

Continuous Collector Current

Total Device Dissipation

Maximum Storage and Junction Temperature Range

Thermal Impedance Junction To Case

500V

500V

5V

0.5A

2W

200°C

50°C/W

MECHANICAL DATA

Dimensions in mm (inches)

TO–39 (TO-205AD) PACKAGE

PIN 1 – Emitter

PIN 2 – Base

PIN 3 – Collector

0.89

(0.035)

max.

12.70

(0.500)

min.

0.41 (0.016)

0.53 (0.021)

dia.

5.08 (0.200)

typ.

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

45°

6.10 (0.240)

6.60 (0.260)

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

1

2

3

0.74 (0.029)

1.14 (0.045)

Collector Base Leakage Current

hFE

D.C Current Gain

ft

Transition Frequency

0.006

30

180

20

mA

—

MHz