IL4208 datasheet(2/7 Pages) VISHAY

2 / 7 page

IL420, IL4208

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 11-Jun-13

Document Number: 83629

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through

hole devices (DIP).

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

Forward current

Surge current

IFSM

2.5

Power dissipation

Pdiss

100

Derate from 25 °C

1.33

mW/°C

OUTPUT

Peak off-state voltage

IL420

VDRM

600

IL4208

VDRM

800

RMS on-state current

ITM

300

Single cycle surge current

ITSM

Power dissipation

Pdiss

500

Derate from 25 °C

6.6

mW/°C

COUPLER

Isolation test voltage



between emitter and detector

t = 1 s

VISO

5300

VRMS

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

 1012



VIO = 500 V, Tamb = 100 °C

RIO

 1011



Storage temperature range

Tstg

- 55 to + 150

°C

Ambient temperature range

Tamb

- 55 to + 100

°C

Soldering temperature (1)

max.

 10 s dip soldering

 0.5 mm from case bottom

Tsld

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

1.16

1.35

Reverse current

VR = 6 V

0.1

μA

Input capacitance

VF = 0 V, f = 1 MHz

CIN

Thermal resistance, junction to ambient

Rthja

750

°C/W

OUTPUT

Off-state current

VD = VDRM, Tamb = 100 °C

IDRM

100

μA

On-state voltage

IT = 300 mA

VTM

1.7

Surge (non-repetitive), on-state current

f = 50 Hz

ITSM

Holding current

500

μA

Latching current

VT = 2.2 V

500

μA

LED trigger current

VD = 5 V

IFT

Trigger current temperature gradient

I

FT/Tj

714

μA/°C

Critical rate of rise off-state voltage

VD = 0.67 VDRM, Tj = 25 °C

dV/dtcr

10 000

V/μs

VD = 0.67 VDRM, Tj = 80 °C

dV/dtcr

5000

V/μs

Critical rate of rise of voltage



at current commutation

VD = 230 VRMS, ID = 300 mARMS, TJ = 25 °C

dV/dtcrq

8V/μs

VD = 230 VRMS, ID = 300 mARMS, TJ = 85 °C

dV/dtcrq

7V/μs

Critical rate of rise of on-state current



commutation

dI/dtcrq

A/ms

Thermal resistance, junction to ambient

Rthja

150

°C/W

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