BC558 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Mar 27

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC556; BC557; BC558

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by about −1.7 mV/K with increasing temperature.

2. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−1

−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−−4

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −2 mA; VCE = −5V;

see Figs 2, 3 and 4

BC556

125

−

475

BC557; BC558

125

−

800

BC556A; BC557A; BC558A

125

−

250

BC556B; BC557B; BC558B

220

−

475

BC557C; BC558C

420

−

800

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−60

−300 mV

IC = −100 mA; IB = −5mA

−−180 −650 mV

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA; note 1

−−750 −

IC = −100 mA; IB = −5 mA; note 1

−−930 −

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V; note 2

−600 −650 −750 mV

IC = −10 mA; VCE = −5 V; note 2

−−−820 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

210

BC558 Datasheet(PDF) 4 Page - NXP Semiconductors

BC558 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL