1

5-800 MHz Internally Matched IF Amplifier

BIF1

BeRex’s BIF1 is a high performance InGaP/

GaAs HBT MMIC amplifier, internally

matched to 50 Ohms and uses a patented

temperature compensation circuit to pro-

vide stable current over the operating tem-

perature range without the need for exter-

nal components and a patented over volt-

age protection circuit to protect a internal

device. The BIF1 is designed for high linear-

ity IF amplifier that requires excellent gain,

high OIP3 and flatness. It is packaged in a

RoHS-compliant with SOT-89 surface mount

Product Description

Device Features

 Base station Infrastructure/RFID

 Commercial/Industrial/Military wireless system

Applications

Applications Circuit

*C1, C2=8200pF ± 5%; C3 = 100 pF ± 5%; C4 = 1000pF ±5%

Typical Performance

1

Absolute Maximum Ratings

Parameter

Frequency

Unit

70

140

250

500

800

MHz

Gain

15.2

15.2

15.1

15.0

14.7

dB

S11

-18.0

-18.0

-18.0

-18.0

-19.0

dB

S22

-16.0

-17.0

-16.0

-15.0

-13.0

dB

OIP3

2

44.0

42.0

40.5

40.0

37.5

dBm

P1dB

20.0

20.8

20.9

21.0

20.7

dBm

Noise Figure

4.2

4.3

4.3

4.4

4.5

dB

Min.

Typical

Max.

Unit

Bandwidth

5

800

MHz

95

105

115

mA

5.0

V

dG/dT

-0.001

dB/°C

50

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

+220

Operating Voltage

V

+7.0

Supply Current

mA

180

Input RF Power

dBm

23

Operation of this device above any of these parameters may result in permanent damage.

Rev. E

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2010 BeRex

*C5 = 10uF; L1 = 1200nH ±5%

Above 7V, a device goes to protection mode.