1

5-800 MHz Internally Matched IF Amplifier

BIF7

BeRex’s BIF7 is a high performance InGaP/

GaAs HBT MMIC amplifier, internally

matched to 50 Ohms and uses a patented

temperature compensation circuit to pro-

vide stable current over the operating tem-

perature range without the need for exter-

nal components and a patented over volt-

age protection circuit to protect a internal

device. The BIF7 is designed for high linear-

ity IF amplifier that requires excellent gain,

high OIP3 and flatness. It is packaged in a

RoHS-compliant with SOT-89 surface mount

Product Description

Device Features

 Base station Infrastructure/RFID

 Commercial/Industrial/Military wireless system

Applications

Applications Circuit

*C1, C2=100nF ± 5%; C3 = 100 pF ± 5%; C4 = 1000pF ±5%

Typical Performance

1

Absolute Maximum Ratings

Parameter

Frequency

Unit

70

140

250

500

800

MHz

Gain

27.1

27.0

26.7

25.7

25.0

dB

S11

-32.0

-41.0

-38.5

-28.6

-23.2

dB

S22

-12.1

-11.6

-10.1

-7.2

-6.5

dB

OIP3

2

40.0

38.5

38.0

36.0

32.5

dBm

P1dB

21.3

21.5

21.5

21.0

19.7

dBm

Noise Figure

2.9

2.9

3.0

3.0

3.0

dB

Min.

Typical

Max.

Unit

Bandwidth

5

800

MHz

85

95

105

mA

5.0

V

dG/dT

-0.003

dB/°C

50

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

+220

Operating Voltage

V

+6.0

Supply Current

mA

160

Input RF Power

dBm

23

Operation of this device above any of these parameters may result in permanent damage.

Rev. E

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2010 BeRex

*C5 = 10uF; L1 = 1uH ±5%

*C1, C2 = 100pF; L1 = 12nH ±5% for RF Bandwidth

C5

C3

C4

C1

C2

RF In

RF Out

Vcc

BT05VG2

BIF7

L1