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D6JB05 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # D6JB05
Description  50V ~ 1000V, 6A Glass Passivated Bridge Rectifiers
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

D6JB05 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
D6JB05 ~ D6JB100
50V ~ 1000V, 6A
Glass Passivated Bridge Rectifiers
11-Jul-2016 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Io : 6A
VRRM : 50~1000V
Glass passivated chip
High surge forward current capability
APPLICATIONS
General purpose 1 phase Bridge
rectifier applications
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
24.7
25.3
H
14.6
15.2
B
11.4
12.0
I
3.9
4.5
C
10.0
10.6
J
2.9
3.9
D
7.3
7.7
K
3.1
3.4
E
1.2
1.4
L
5.4
6.0
F
1.35
1.55
M
2.0
2.6
G
0.9
1.1
N
0.4
0.6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
D6JB
05
D6JB
10
D6JB
20
D6JB
40
D6JB
60
D6JB
80
D6JB
100
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
With heatsink
TC=100°C
6
Average Rectified Output
Current@ 60Hz sine
wave, R-load
Without heatsink
TA=25°C
IO
2.8
A
Non-repetitive Surge Forward Current@ 60Hz
sine wave, 1 cycle, TJ=25°C
IFSM
150
A
Current Squared Time
1
I
2t
93
A
2S
Dielectric Strength@ terminals to case, AC 1
minute
VDIS
2
KV
Mounting Torque@ recommend torque
:5kg
cm
Tor
8
kg.cm
Peak Forward Voltage@ IFM=3A, pulse
measurement, rating of per diode
VFM
1.05
V
Peak Reverse Current@ VRM=VRRM, pulse
measurement, rating of per diode
IRRM
10
µA
Without heatsink
RθJA
26
Thermal Resistance
With heatsink
RθJC
3.4
°C / W
Junction and Storage Temperature Range
TJ, TSTG
150, -55~150
°C
Notes:
1.
1ms≦t<8.3ms, TJ=25°C, rating of per diode.
JB


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