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D6JB05 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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D6JB05 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente D6JB05 ~ D6JB100 50V ~ 1000V, 6A Glass Passivated Bridge Rectifiers 11-Jul-2016 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Io : 6A VRRM : 50~1000V Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 24.7 25.3 H 14.6 15.2 B 11.4 12.0 I 3.9 4.5 C 10.0 10.6 J 2.9 3.9 D 7.3 7.7 K 3.1 3.4 E 1.2 1.4 L 5.4 6.0 F 1.35 1.55 M 2.0 2.6 G 0.9 1.1 N 0.4 0.6 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameter Symbol D6JB 05 D6JB 10 D6JB 20 D6JB 40 D6JB 60 D6JB 80 D6JB 100 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V With heatsink TC=100°C 6 Average Rectified Output Current@ 60Hz sine wave, R-load Without heatsink TA=25°C IO 2.8 A Non-repetitive Surge Forward Current@ 60Hz sine wave, 1 cycle, TJ=25°C IFSM 150 A Current Squared Time 1 I 2t 93 A 2S Dielectric Strength@ terminals to case, AC 1 minute VDIS 2 KV Mounting Torque@ recommend torque :5kg. cm Tor 8 kg.cm Peak Forward Voltage@ IFM=3A, pulse measurement, rating of per diode VFM 1.05 V Peak Reverse Current@ VRM=VRRM, pulse measurement, rating of per diode IRRM 10 µA Without heatsink RθJA 26 Thermal Resistance With heatsink RθJC 3.4 °C / W Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Notes: 1. 1ms≦t<8.3ms, TJ=25°C, rating of per diode. JB |
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