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D6UB80 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # D6UB80
Description  Voltage 50V ~ 1000V 6.0Amp Glass Passivated Bridge Rectifiers
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

D6UB80 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
D6UB05 ~ D6UB100
Voltage 50V ~ 1000V
6.0Amp Glass Passivated Bridge Rectifiers
23-Jun-2015 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Io : 6A
VRRM : 50~1000V
Glass passivated chip
High surge forward current capability
APPLICATIONS
General purpose 1 phase Bridge
rectifier applications
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
13.3
14.3
G
13.1
13.5
B
10.3
11.3
H
3.7
3.9
C
6.4
7.4
J
2.0
2.2
D
4.5
5.5
K
0.4
0.6
E
1.05
1.45
L
2.6
3.6
F
0.60
0.85
M
3.1
3.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
D6UB
05
D6UB
10
D6UB
20
D6UB
40
D6UB
60
D6UB
80
D6UB
100
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Without heatsink
TA =29°C
1.5
Average Rectified Output
Current @ 60Hz sine
wave, R-load
With heatsink
TC =140°C
IO
6.0
A
Surge (Nonrepetitive) Forward Current @
60HZ sine wave, 1 cycle, TJ=25°C
IFSM
150
A
Current Squared Time
1
I
2t
93
A
2S
Dielectric Strength@ Terminals to case
,AC 1
minute
VDIS
2
KV
Mounting Torque@ Recommend torque
:
5kg.cm
Tor
8
Kg.cm
Peak Forward Voltage@ IFM=3A, Pulse
measurement, Rating of per diode
VFM
1.1
V
Peak Reverse Current@ VRM=VRRM , Pulse
measurement, Rating of per diode
IRRM
10
µA
Without heatsink
RθJA
55
Thermal Resistance
With heatsink
RθJC
1.5
°C / W
Junction and Storage temperature range
TJ,TSTG
-55~+150
°C
Notes:
1.
1ms≤t<8.3ms TJ=25°C
,Rating of per diode
D3K


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