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D10JB80 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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D10JB80 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente D10JB05 ~ D10JB100 50V ~ 1000V, 10A Glass Passivated Bridge Rectifiers 22-Apr-2016 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Io : 10A VRRM : 50~1000V Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameter Symbol D10 JB05 D10 JB10 D10 JB20 D10 JB40 D10 JB60 D10 JB80 D10 JB100 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V With heatsink TC =95°C 10 Average Rectified Output Current @ 60Hz sine wave, R-load Without heatsink TA =25°C IO 3.2 A Non-repetitive Surge Forward Current @ 60Hz sine wave, 1 cycle, TJ=25°C IFSM 150 A Current Squared Time 1 I 2t 93 A 2S Dielectric Strength@ Terminals to case, AC 1 minute VDIS 2 KV Mounting Torque@ Recommend torque: 5 kg.cm Tor 8 kg.cm Peak Forward Voltage@ IFM=5A, pulse measurement, rating of per diode VFM 1.1 V Peak Reverse Current@ VRM=VRRM , Pulse measurement, Rating of per diode IRRM 10 µA Thermal Resistance from Junction to Ambient@ without heatsink RθJA 28 °C / W Thermal Resistance from Junction to Case@ with heatsink RθJC 2.8 °C / W Junction and Storage Temperature Range TJ, TSTG 150, -55~+150 °C Notes: 1. 1ms≦t<8.3ms, TJ=25°C, rating of per diode. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 24.7 25.3 H 14.6 15.2 B 11.4 12.0 I 3.9 4.5 C 10.0 10.6 J 2.9 3.9 D 7.3 7.7 K 3.1 3.4 E 1.2 1.4 L 5.4 6.0 F 1.35 1.55 M 2.0 2.6 G 0.9 1.1 N 0.4 0.6 JB |
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