Elektronische Bauelemente

2SD1816

4A , 120V

NPN Epitaxial Planar Silicon Transistor

21-Jan-2015 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

3

Emitter

Collector

2

A

C

D

H

G E

F

K

B

J

P

M

1 8 1 6

= Date Code

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Collector-to-Emitter Saturation Voltage

Excllent Linearity of hFE

High fT

Fast Switching Time

MARKING CODE

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

120

V

Collector to Emitter Voltage

100

V

Emitter to Base Voltage

6

V

Collector Current (DC)

4

A

Collector Current (Pulse)

1

8

A

Collector Power Dissipation

1

W

Junction Temperature

150

℃

Storage Temperature

-40 ~ 150

℃

NOTE:

1. Duty=1/2, Pw=20ms

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

120

-

-

V

Collector-emitter breakdown voltage

100

-

-

V

Emitter-base breakdown voltage

6

-

-

V

Collector cut-off current

-

-

1

µ

A

Emitter cut-off current

-

-

1

µ

A

140

-

280

DC current gain

1

40

-

-

Collector-emitter saturation voltage

1

-

0.15

0.4

V

Base -emitter saturation voltage

1

-

0.9

1.2

V

Transition frequency

-

180

-

MHz

Collector Output Capacitance

-

40

-

pF

Turn-on time

-

100

-

Storage time

-

900

-

Fall time

-

50

-

nS

See test circuit

NOTE:

1. Measured under pulse condition. Pulse width≦300µs, Duty Cycle≦2%

TO-251

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.35

6.80

G

5.40

6.25

B

4.90

5.50

H

0.85

1.50

C

2.15

2.40

J

2.30

D

0.43

0.90

K

0.60

1.05

E

6.50

7.50

M

0.50

0.90

F

7.20

9.65

P

0.43

0.62