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BCP882H Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP882H Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente BCP882H 3A , 70 V NPN Plastic-Encapsulate Transistor 23-Aug-2017 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A E C D B K H F G L J 1 2 3 4 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package. High DC Current Gain Low VCE(sat) MARKING CLASSIFICATION OF hFE Rank BCP882H-Y Range 160~320 PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 70 V Collector to Emitter Voltage VCEO 70 V Emitter to Base Voltage VEBO 6 V Continuous Collector Current IC 3 A Collector Power Dissipation PC 500 mW Thermal Resistance Junction to Ambient RθJA 250 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 70 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 70 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 1 µA VCB=40V, IE=0 Collector cut-off current ICEO - - 10 µA VCE=30V, IB=0 Emitter Cut-Off Current IEBO - - 1 µA VEB=6V, IC=0 DC Current Gain hFE 160 - 320 VCE=2V, IC=1A Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=2A, IB=0.2A Base to emitter Saturation Voltage VBE(sat) - - 1.5 V IC=2A, IB=0.2A Transition Frequency fT - 50 - MHz VCE=5V, IC=0.1A, f=10MHz SOT-89 D882H 1. Base 2. Collector 3. Emitter |
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