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QSZ2 Datasheet(PDF) 2 Page - Rohm

Part # QSZ2
Description  General purpose transistor
PDF  5 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

QSZ2 Datasheet(HTML) 2 Page - Rohm

  QSZ2 Datasheet HTML 1Page - Rohm QSZ2 Datasheet HTML 2Page - Rohm QSZ2 Datasheet HTML 3Page - Rohm QSZ2 Datasheet HTML 4Page - Rohm QSZ2 Datasheet HTML 5Page - Rohm  
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QSZ2
Transistors
2/4
Absolute maximum ratings (Ta=25
°C)
Tr1
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−30
V
V
V
A
°C
°C
−30
−6
−1.5
A
−3
500
150
−55 to +150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
mW/Total
1.25
0.9
∗1
∗2
W/Total
∗3
W/Element
∗3
∗1 Single pulse Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25mm 25mm t0.8mm ceramic substrate.
+
+
Tr2
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
1.5
500
150
−55 to +150
3
Unit
V
V
V
A
A
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
mW/Total
1.25
0.9
∗1
∗2
W/Total
∗3
W/Element
∗3
∗1 Single pulse Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25mm 25mm t0.8mm ceramic substrate.
Electrical characteristics (Ta=25
°C)
Tr1
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Min.
−30
−30
−6
−
−
270
−
−
−
−
−
−
−
−200
−
13
−
−
−
−100
−100
680
−370
−
V
IC
=−10µA
IC
=−1mA
IE
=−10µA
VCB
=−30V
VEB
=−6V
VCE
=−2V, IC=−100mA
IC
=−1mA, IB=−50mA
VCB
=−10V, IE=0mA, f=1MHz
V
V
nA
−
mV
nA
fT
−
280
−
VCE
=−2V, IE=100mA, f=100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collerctor-emitter saturation voltage
Transition frequency
Output capacitance
∗
∗
∗ Pulsed
Tr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
=10V, IE=0A, f=1MHz
fT
−
300
−
MHz
VCE
=2V, IE=−100mA, f=100MHz
BVCBO
30
−−
V
IC
=10µA
BVCEO
30
−−
V
IC
=1mA
BVEBO
6
−−
V
IE
=10µA
ICBO
−−
100
nA
VCB
=30V
IEBO
−
−
100
nA
VEB
=6V
VCE(sat)
−
140
350
mV
IC
=1A, IB=50mA
hFE
270
−
680
−
VCE
=2V, IC=100mA
Cob
−
11
−
pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed



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