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CZD41C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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CZD41C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente CZD41C NPN Epitaxial Planar Silicon Transistor 13-Oct-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Monolithic Construction With Built–in Base–Emitter Resistors Straight Lead Version in Plastic Sleeves (“–1” Suffix) Designed for General Purpose Amplifier and Low Speed S witching Applications. PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V Collector Current IC 6 A Collector Power Dissipation PC 1.25 W Junction and Storage Temperature TJ,TSTG 150, -65 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 100 - - V IC=100µA, IE=0 Collector-emitter breakdown voltage VCEO(SUS) 100 - - V IC=30mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current ICEO - - 50 µ A VCB=60V, IE=0 Emitter cut-off current IEBO - - 0.5 mA VEB=5V, IC=0 30 - - VCE=4V, IC=0.3A DC current gain 1 hFE 15 - 75 VCE=4V, IC=3A Collector-emitter saturation voltage 1 VCE(sat) - - 1.5 V IC=6A, IB=0.6A Base-emitter saturation voltage 1 VBE(on) - - 2 V VCE=4V, IC=6A Transition frequency fT 3 - - MHz VCE=10V, IC= 500mA, f=1MHz TO-252 (D-Pack) A C D N O P G E F H K J M B Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 |
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