MJE172 datasheet(1/3 Pages) SECOS

Part #	MJE172

Description	PNP General Purpose Transistor

PDF	3 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 3 page

MJE170 / MJE171 / MJE172

PNP General Purpose Transistor

Elektronische Bauelemente

25-Nov-2010 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES



Low frequency amplifier



Low current



High speed switching applications

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector - Base Voltage

MJE170

VCBO

-60

V

MJE171

-80

MJE172

-100

Collector - Emitter Voltage

MJE170

VCEO

-40

V

MJE171

-60

MJE172

-80

Emitter - Base Voltage

VEBO

-7

V

Collector Current -Continuous

IC

-3

A

Cpllector Power Dissipation

PC

1.5

W

Junction, Storage Temperature

TJ, TSTG

+150, -65 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector - Base Breakdown

Voltage

MJE170

V(BR)CBO

-60

-

V

IC = -1mA, IE = 0

MJE171

-80

-

MJE172

-100

-

Collector - Emitter Breakdown

Voltage

MJE170

V(BR)CEO

-40

-

V

IC = -10 mA, IB = 0

MJE171

-60

-

MJE172

-80

-

Emitter - Base Breakdown Voltage

V(BR)EBO

-7

-

V

IE = -1mA, IC = 0

Collector Cut - Off Current

MJE170

ICBO

-

-0.1

A

VCB = -60V, IE = 0

MJE171

-

-0.1

VCB = -80V, IE = 0

MJE172

-

-0.1

VCB = -100V, IE = 0

TO-126

Emitter

Collector

Base

C

D

B

A

E

N

F

L

G

K

J

H

M

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

7.40

7.80

H

1.10

1.50

B

2.50

2.90

J

0.45

0.60

C

10.60

11.00

K

0.66

0.86

D

15.30

15.70

L

2.10

2.30

E

3.70

3.90

M

1.17

1.37

F

3.90

4.10

N

3.00

3.20

G

2.29 TYP.

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