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MMBT3904T Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # MMBT3904T
Description  NPN Silicon General Purpose Transistors
PDF  6 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT3904T Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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MMBT3904T
NPN Silicon
General Purpose Transistors
Elektronische Bauelemente
12-Apr-2010 Rev. A
Page 2 of 6
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
Off Characteristics
Collector-Emitter Breakdown Voltage
(3)
V(BR)CEO
40
-
Vdc
IC =1.0 mAdc
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
Vdc
IC = 10 µAdc
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
-
Vdc
IE = 10 µAdc
Collector Cut-Off Current
IBL
-50
nAdc VCE = 30 Vdc, VEB = 3.0 Vdc
Emitter Cut-Off Current
ICEX
-50
nAdc VCE = 30 Vdc, VBE = 3.0 Vdc
On Characteristics
(3)
DC Current Gain
(1)
hFE
40
-
-
IC = 0.1 mAdc, VCE = 1.0 Vdc
70
-
IC = 1.0 mAdc, VCE = 1.0 Vdc
100
300
IC = 10 mAdc, VCE = 1.0 Vdc
60
-
IC = 50 mAdc, VCE = 1.0 Vdc
30
-
IC = 100 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
(3)
VCE(sat)
-
0.2
Vdc
IC = 10 mAdc, IB = 1.0 mAdc
-0.3
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
(3)
VBE(sat)
0.65
0.85
Vdc
IC = 10 mAdc, IB = 1.0 mAdc
-0.95
IC = 50 mAdc, IB = 5.0 mAdc
Small-Signal Characteristics
Curren-Gain-Bandwidth Product
fT
200
-
MHz
VCE = 20 Vdc, IC = 10 mAdc,
f = 100 MHz
Output Capacitance
Cobo
-4.0
pF
VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz
Input Capacitance
Cibo
-8.0
pF
VBE = 0.5 Vdc, IE = 0, f = 1.0 MHz
Input Impedancen
hie
1.0
10
pF
VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz
Voltage Feedback Ratio
hre
0.5
8.0
X10
-4
VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz
Small-Signal Current Gain
hfe
100
400
-
VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz
Output Admittance
hoe
1.0
40
θmhos VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz
Noise Figure
NF
-
5.0
dB
VCE = 5.0 Vdc, IC = 100 µAdc,
RS = 1.0k f = 1.0 kHz
Switching Characteristics
Delay Time
Td
-
35
nS
VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10
mAdc, IB1 = 1.0 mAdc
Rise Time
Tr
-
35
nS
Storage Time
TS
-
200
nS
VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc
Fall Time
TF
-
50
nS
3.
Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle≦ 2.0%.



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