SDT2P02 datasheet(1/4 Pages) SECOS

Part #	SDT2P02

Description	-2.2A, -20V, RDS(ON) 200 m(ohm) Dual-P Enhancement Mode MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 4 page

Elektronische Bauelemente

SDT2P02

-2.2A, -20V, RDS(ON) 200 mΩ

Ω

Dual-P Enhancement Mode MOSFET

12-Aug-2017 Rev. D

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low RDS(on)

and to assure minimal power loss and heat dissipation.

FEATURES

Low RDS(on) trench technology

Low thermal impedance

Fast switching speed

APPLICATIONS

Battery-powered instruments

Portable computing

Mobile phones

GPS units and media players

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±8

V

TA=25°C

-2.2

Continuous Drain Current@ VGS= -4.5V

1

TA=70°C

ID

-1.7

A

Pulsed Drain Current

2

IDM

-8.8

A

Power Dissipation@ TA=25°C

1

PD

1.5

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

t≦5 sec

83

Maximum Thermal Resistance from

Junction to Ambient

1

Steady State

RθJA

125

°C / W

Package

MPQ

Leader Size

DFN2×2-6L-J

3K

7 inch

DFN2x2-6L-J

Millimeter

REF.

Min.

Typ.

Max.

REF.

Min.

Typ.

Max.

A

2.00 BSC.

G

0.30 BSC

B

2.00 BSC.

H

0.20 BSC

-

C

0.675

0.75

0.80

J

0

-

0.06

D

0.30 Typ.

K

0.15

0.20

0.25

E

0.75

0.86

1.1

L

0.20

0.30

0.38

F

0.65BSC

P

0.52

0.65

0.72

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