Elektronische Bauelemente

SMS2312

Ω

Ω

Ω

N-Channel Enhancement Mode Power MOSFET

24-Feb-2017 Rev. C

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

20

-

-

V

Gate-Threshold Voltage

0.45

-

1

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

µA

Forward Transfer conductance

6

-

-

S

Diode Forward Voltage

4

-

0.75

1.2

V

-

-

32

-

-

36

Static Drain-Source On-Resistance

4

-

-

42

m

Switching Parameters

Input Capacitance

-

865

-

Output Capacitance

-

105

-

Reverse Transfer Capacitance

-

55

-

pF

f =1.0MHz

Turn-on Delay Time

-

10

-

Rise Time

-

20

-

Turn-off Delay Time

-

32

-

Fall Time

-

12

-

nS

Gate Resistance

0.5

-

4.8

f =1.0MHz

Notes:

1. . The data tested by surface mounted on a 1 inch2 FR4 board with 2OZ copper.

2.

Surface mounted on min. copper pad.

3.

Pulse width limited by Max. junction temperature.

4.

Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.