SMS3401A datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMS3401A

-4.2A , -30V , RDS(ON) 60 m

P-Channel Enhancement Mode Power MOSFET

22-May-2015 Rev.D

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

-30

VGS=0, ID= -250μA

Gate-Threshold Voltage

VGS(th)

-0.7

-1.3

VDS=VGS, ID= -250μA

Gate-Source Leakage Current

IGSS

±100

VGS= ±12V, VDS=0

Drain-Source Leakage Current

IDSS

-1

μA

VDS= -24V, VGS=0

Forward Tranconductance

gfs

VDS= -5V, ID= -5A

VGS= -10V, ID=-4.2A

VGS= -4.5V, ID= -4A

Static Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -2.5V, ID= -1A

Dynamic Parameters

Input Capacitance

Ciss

1050

Output Capacitance

Coss

127

Reverse Transfer Capacitance

Crss

VGS =0

VDS= -15V

f =1.0MHz

Turn-on Delay Time

Td(on)

6.5

Rise Time

3.5

Turn-off Delay Time

Td(off)

Fall Time

VGS= -10V

VDS= -15V

RGEN=6Ω

RL=3.6Ω

Total Gate Charge

9.5

ID= -4A, VDS= -15V

VGS= -4.5V

Source-Drain Diode

Forward Voltage

VSD

-1

VGS =0, IS= -1A

Note:

1. Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, When Mounted on 1 inch

2 FR4 Board, t < 5 sec, RθJA=100°C / W

3. Pulse Width≤300µs, Duty Cycle ≤ 2%.

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