SMS3407 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS3407

-4.1A , -30V , RDS(ON) 60 mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

2-Oct-2015 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-1

-1.4

-3

VDS=VGS, ID= -250µA

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V, VDS=0

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -24V, VGS=0

Forward Tranconductance

gfs

5.5

VDS= -5V, ID= -4A

VGS= -10V, ID=-4.1A

Static Drain-Source On-Resistance

RDS(ON)

VGS= -4.5V, ID= -3A

Dynamic Parameters

Input Capacitance

Ciss

700

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

VGS =0

VDS= -15V

f =1.0MHz

Switching Parameters

Turn-on Delay Time

Td(on)

8.6

Rise Time

Turn-off Delay Time

Td(off)

28.2

Fall Time

13.5

VGS= -10V

VDS= -15V

RGEN=3

RL=3.6

Source-Drain Diode

Forward Voltage

VSD

-1

VGS =0, IS= -1A

Note:

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

These parameters have no way to verify.

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