SMS8810 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS8810

7A , 20V , RDS(ON) 20 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

13-Mar-2015 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=16V, VGS=0

±1

VGS= ±4.5V, VDS=0

Gate-Source Leakage Current

IGSS

±10

µA

VGS= ±8V, VDS=0

Gate-Threshold Voltage

VGS(th)

0.4

VDS=VGS, ID=250µA

Forward Transconductance

gfs

VDS=5V, ID=7A

Diode Forward Voltage

VSD

IS=1A, VGS=0

VGS=10V, ID=7A

VGS=4.5V, ID=6.6A

VGS=3.8V, ID=6A

VGS=2.5V, ID=5.5A

Static Drain-Source On-Resistance

RDS(ON)

VGS=1.8V, ID=5A

Dynamic Parameters

Input Capacitance

Ciss

1150

Output Capacitance

Coss

185

Reverse Transfer Capacitance

Crss

145

VGS =0

VDS=10V

f =1.0MHz

Total gate charge

Gate-source charge

Qgs

0.8

Gate-drain charge

Qgd

3.2

VGS =4.5V

VDS=10V

ID=7A

Switching Parameters

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=10V

VGEN=5V

RGEN=3

RL=1.35

Note:

Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 0.5%.

Guaranteed by design, not subject to production testing.

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