SSD05N60J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD05N60J

5A, 600V, RDS(ON) 2.5

N-Ch Enhancement Mode Power MOSFET

28-Dec-2015 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

600

VGS=0, ID=250µA

Drain-Source Diode Forward Voltage

VSD

1.4

VGS=0, IS=4.5A

Drain-Source Leakage Current

IDSS

µA

VDS=600V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VDS=0V, VGS=±30V

On Characteristics

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON)

2.5

VGS=10V, ID=2.25A

Dynamic Characteristics

Input Capacitance

Ciss

670

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

8.5

VDS=25V

VGS=0

f=1MHz

Switching Characteristics

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

100

VDD=300V

VGS=10V

RG=25

ID=4.5A

Notes:

EAS condition: L=16mH, IL=5A, VDD=50V, RG=25 , Starting TJ=25°C.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.

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