SSD80N03J datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

SSD80N03J

80A, 30V, RDS(ON) 6.5m

N-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev. B

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=30V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

1.0

VDS=VGS, ID=250µA

6.5

VGS=10V, ID=30A

Static Drain-Source On-Resistance

RDS(ON)

VGS=5V, ID=24A

Forward Transconductance

gfs

VDS=5V, ID=24A

Dynamic Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Change

Qgd

ID=30A

VDS=10V

VGS=10V

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=15V

ID=30A

VGS=10V

RG=2.7

Switching Characteristics

Input Capacitance

Ciss

2330

Output Capacitance

Coss

460

Reverse Transfer Capacitance

Crss

230

VGS =0

VDS=15V

f =1.0MHz

Source-Drain Diode Characteristics

Diode Forward Voltage

VSD

1.2

IS=24A, VGS=0

Continuous Source Current

Pulsed Source Current

ISM

320

Notes:

Pulse Test : Pulse width

≤300µs, duty cycle ≤2%.

SSD80N03J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSD80N03J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2

Datasheet Download

Link URL