Elektronische Bauelemente

SSG2601

N & P-Ch Enhancement Mode Power MOSFET

Ω

Ω

Ω

Ω

Ω

Ω

10-Jun-2014 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Gate Threshold Voltage

-0.5

-

-1

V

Forward Transconductance

-

12

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage Current

-

-

-5

uA

-

-

75

Static Drain-Source On-Resistance

2

-

-

105

m

Total Gate Charge

-

10

-

Gate-Source Charge

-

1.93

-

Gate-Drain (“Miller”) Change

-

3.18

-

nC

Turn-on Delay Time

2

-

5.6

-

Rise Time

-

47.4

-

Turn-off Delay Time

-

31.6

-

Fall Time

-

17.2

-

nS

Input Capacitance

-

857

-

Output Capacitance

-

114

-

Reverse Transfer Capacitance

-

108

-

pF

f=1.0MHz

Source-Drain Diode

Forward On Voltage

2

-

-

-1.2

V

Continuous Source Current

1,4

-

-

-5.3

A

Pulsed Source Curren

2,4

-

-

-23

A

Notes:

1. Surface mounted on a 1 inch

2

FR-4 board with 20Z copper. 135°C/ W when mounted on Min. copper pad.

2. The date tested by pulse width≦300us, duty cycle≦2%.

3. The power dissipation is limited by 150°C juncti on temperature.

4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.