SSG4407J datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

SSG4407J

-12A, -30V, RDS(ON) 13 mΩ

Ω

P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. C

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

-30

VGS= 0V, ID= -250µA

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -30V,VGS= 0V

Gate-Body Leakage Current

IGSS

±100

VDS= 0V, VGS=±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

-1

-2.2

VDS=VGS, ID = -250µA

VGS= -10V, ID = -12A

Drain-Source On-Resistance

RDS(ON)

VGS= -6V, ID = -10A

Forward Transfer Conductance

Gfs

VDS= -5V, ID= -15A

Dynamic Characteristics

Input Capacitance

Ciss

2900

Output Capacitance

Coss

410

Reverse Transfer Capacitance

Crss

280

VGS= 0V

VDS= -15V

f=1.0MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

ID= -10A

VDS= -15V

VGS= -10V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD= -15V

VGS= -10V

RG= 3

RL= 1.25

Gate Resistance

3.6

VDS=0V, VGS=0V, f=1.0MHz

Source-Drain Diode Characteristics

Forward On Voltage

VDS

-1.2

IS= -2A, VGS=0V

Continuous Source Current

-15

Pulsed Source Current

ISM

-60

Notes:

Pulse Test : Pulse Width≦300µs , duty cycle≦2%.

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