IRF7304

PD - 9.1240B

Description

PRELIMINARY

Absolute Maximum Ratings

SO-8

Thermal Resistance

** When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design for

which HEXFET Power MOSFETs are well known, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in an

application with dramatically reduced board space. The package is designed for

vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater

than 0.8W is possible in a typical PCB mount application.

Parameter

Min.

Typ.

Max.

Units

Junction-to-Amb. (PCB Mount, steady state)**

––––

––––

90

°C/W

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Parameter

Max.

Units

-4.0

A

-3.6

A

-2.9

A

Pulsed Drain Current

-14

A

Power Dissipation (PCB Mount)**

1.4

W

Linear Derating Factor (PCB Mount)**

0.011

W/°C

Gate-to-Source Voltage

±8.0

V

dv/dt

Peak Diode Recovery dv/dt

-1.2

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

127

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