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IRF7424 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF7424
Description  Ultra Low On-Resistance
PDF  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7424 Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-11
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-9.3
A
IDM
Pulsed Drain Current

-47
PD @TA = 25°C
Power Dissipation
ƒ
2.5
PD @TA = 70°C
Power Dissipation
ƒ
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
3/29/01
www.irf.com
1
IRF7424
HEXFET® Power MOSFET
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area.
This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 94024A
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
VDSS
RDS(on) max (mΩ)
Ω)
Ω)
Ω)
Ω)
ID
-30V
13.5@VGS = -10V
-11A
22@VGS = -4.5V
-8.8A
SO-8


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