Feb.1999

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR20A, BCR20B, BCR20C, BCR20E

MEDIUM POWER USE

A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MAXIMUM RATINGS (continue)

Conditions

BCR20A

BCR20B

BCR20C

BCR20E

BCR20A only, 10 sec.

BCR20C only

Symbol

—

—

—

Parameter

Weight (Typical value)

Soldering temperature

Mounting torque

Isolated voltage

Ratings

3.5

9.0

9.0

11

230

30

2.94

1500

Unit

g

°C

kg·cm

N·m

V

Symbol

Test conditions

measurement

Junction to case (BCR20A, BCR20B, BCR20C)

Junction to base (BCR20E)

Unit

mA

V

V

V

V

mA

mA

mA

V

°C/W

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

!

@

#

!

@

#

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

V2

Gate trigger current

V2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

Limits

Min.

—

—

—

—

—

—

—

—

0.2

—

—

V3

Max.

3.0

1.5

1.5

1.5

1.5

30

30

30

—

1.1

2.4

—

Test conditions

Voltage

class

8

10

(V)

400

600

Min.

—

10

—

10

Commutating voltage and current waveforms

(inductive load)

Symbol

R

L

R

L

Unit

V/

µs

1. Junction temperature

°C

2. Rate of decay of on-state commutat-

ing current

3. Peak off-state voltage

ELECTRICAL CHARACTERISTICS

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c