SSG4503J datasheet(3/5 Pages) SECOS

3 / 5 page

Elektronische Bauelemente

SSG4503J

N-Ch: 6.9A, 30V, RDS(ON) 28 mΩ

Ω

P-Ch: -6.3A, -30V, RDS(ON) 36 mΩ

Ω

N & P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 3 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

P-Ch ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID= -250µA

Gate Threshold Voltage

VGS(th)

-1

-1.7

-3

VDS=VGS, ID= -250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS= -30V, VGS=0

VGS= -10V, ID= -6A

Drain-Source On-Resistance

RDS(ON)

VGS= -4.5V, ID= -4A

Forward Transfer conductance

gfs

VDS= -10V, ID= -6A

Diode Forward Voltage

VSD

-1.2

VGS=0, IS= -1.7A

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS= -24V

VGS= -4.5V

ID= -6A

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDS= -15V

VGS= -10V

RD=15

RG=3.3

ID= -1A

Input Capacitance

Ciss

1380

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

140

VDS= -25V

VGS=0

f=1MHz

Notes:

These tests are performed with infinite heat sink.

Pulse width by Max. junction temperature.

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

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